設備設計及製作
濺鍍設備
應用於LED用透明導電膜(以下稱ITO)及金屬薄膜製程
高溫濺鍍設備
應用於化合物半導體或其他高溫材料開發
設備規格
| Item | Auto Loader | LL Chamber |
TR Chamber |
Process Chamber | Process Application |
|---|---|---|---|---|---|
| Vacuum Level | - | ≦ x 10-5 Pa | ≦ x 10-5 Pa | ≦ x 10-5 Pa | 1, AlN on Si 2, GaN/AlN on Si 3, GaN/AlN on Sapphire 4, AlN on SiC |
| Heating Capacity | RT～1000℃ | ||||
| Thickness Uniformity | Target value：≦±1% | ||||
| Cathode Type | Dual Cathode | ||||
| Wafer Size | 4”& 6”; 2025 H2 : available for 8” | ||||
| Environment Particle | Class 100 | ||||